Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

S. Kitagoh, R. Okada, A. Kawano, M. Watanabe, Y. Takano, T. Yamaguchi, T. Chikyow, Hiroshi Kawarada

    研究成果: Article

    10 引用 (Scopus)

    抄録

    The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

    元の言語English
    ジャーナルPhysica C: Superconductivity and its Applications
    470
    発行部数SUPPL.1
    DOI
    出版物ステータスPublished - 2010 12

    Fingerprint

    Diamond
    Boron
    Film thickness
    Diamonds
    boron
    film thickness
    diamonds
    Transmission electron microscopy
    transmission electron microscopy
    Electron microscopes
    electron microscopes
    Crystalline materials
    Substrates

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Energy Engineering and Power Technology
    • Electronic, Optical and Magnetic Materials

    これを引用

    Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond. / Kitagoh, S.; Okada, R.; Kawano, A.; Watanabe, M.; Takano, Y.; Yamaguchi, T.; Chikyow, T.; Kawarada, Hiroshi.

    :: Physica C: Superconductivity and its Applications, 巻 470, 番号 SUPPL.1, 12.2010.

    研究成果: Article

    Kitagoh, S. ; Okada, R. ; Kawano, A. ; Watanabe, M. ; Takano, Y. ; Yamaguchi, T. ; Chikyow, T. ; Kawarada, Hiroshi. / Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond. :: Physica C: Superconductivity and its Applications. 2010 ; 巻 470, 番号 SUPPL.1.
    @article{e31c251aa8d4460c8bd9cbb149c942a9,
    title = "Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond",
    abstract = "The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.",
    keywords = "Boron-doped, Crystalline structure, Diamond, Superconductivity, Thin film",
    author = "S. Kitagoh and R. Okada and A. Kawano and M. Watanabe and Y. Takano and T. Yamaguchi and T. Chikyow and Hiroshi Kawarada",
    year = "2010",
    month = "12",
    doi = "10.1016/j.physc.2009.12.064",
    language = "English",
    volume = "470",
    journal = "Physica C: Superconductivity and its Applications",
    issn = "0921-4534",
    publisher = "Elsevier",
    number = "SUPPL.1",

    }

    TY - JOUR

    T1 - Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

    AU - Kitagoh, S.

    AU - Okada, R.

    AU - Kawano, A.

    AU - Watanabe, M.

    AU - Takano, Y.

    AU - Yamaguchi, T.

    AU - Chikyow, T.

    AU - Kawarada, Hiroshi

    PY - 2010/12

    Y1 - 2010/12

    N2 - The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

    AB - The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

    KW - Boron-doped

    KW - Crystalline structure

    KW - Diamond

    KW - Superconductivity

    KW - Thin film

    UR - http://www.scopus.com/inward/record.url?scp=78649694561&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=78649694561&partnerID=8YFLogxK

    U2 - 10.1016/j.physc.2009.12.064

    DO - 10.1016/j.physc.2009.12.064

    M3 - Article

    AN - SCOPUS:78649694561

    VL - 470

    JO - Physica C: Superconductivity and its Applications

    JF - Physica C: Superconductivity and its Applications

    SN - 0921-4534

    IS - SUPPL.1

    ER -