Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

S. Kitagoh, R. Okada, A. Kawano, M. Watanabe, Y. Takano, T. Yamaguchi, T. Chikyow, H. Kawarada*

*この研究の対応する著者

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

本文言語English
ページ(範囲)S610-S612
ジャーナルPhysica C: Superconductivity and its applications
470
SUPPL.1
DOI
出版ステータスPublished - 2010 12月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学

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