Cryogenic operation of surface-channel diamond field-effect transistors

Hiroaki Ishizaka*, Minoru Tachiki, Kwang Soup Song, Hitoshi Umezawa, Hiroshi Kawarada

*この研究の対応する著者

研究成果査読

7 被引用数 (Scopus)

抄録

Cryogenic operation of field-effect transistors (FETs) fabricated on hydrogen-terminated (H-terminated) diamond surface conductive layers is investigated. 5-μm gate-length metal-insulator- semiconductor FETs (MISFETs) is fabricated using CaF2 film as a gate insulator. The MISFETs operate successfully even at 4.4 K. At low temperature, the contact between source/drain electrode and H-terminated diamond surface cannot maintain ohmic characteristics, because the thermal activation energy of the carriers is not high enough to overcome the barrier height at the interfaces between the source electrode and the H-terminated diamond. Estimated channel mobility increases from 63 cm2/V-s to 137 cm2/V-s and the maximum transconductance increases from 10.5 mS/mm to 14.5 mS/mm, as the temperature decreases from 300 K to 4.4 K, indicating reduced phonon scattering of the channel.

本文言語English
ページ(範囲)1800-1803
ページ数4
ジャーナルDiamond and Related Materials
12
10-11
DOI
出版ステータスPublished - 2003

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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