Crystal growth of 4H-SiC on 6H-SiC by traveling solvent method

Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Koji Moriguchi, Nobuhiro Okada

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.

元の言語English
ホスト出版物のタイトルMaterials Science Forum
ページ36-39
ページ数4
679-680
DOI
出版物ステータスPublished - 2011
外部発表Yes
イベント8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 - Oslo, Norway
継続期間: 2010 8 292010 9 2

出版物シリーズ

名前Materials Science Forum
679-680
ISSN(印刷物)02555476

Other

Other8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
Norway
Oslo
期間10/8/2910/9/2

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

これを引用

Kusunoki, K., Kamei, K., Yashiro, N., Moriguchi, K., & Okada, N. (2011). Crystal growth of 4H-SiC on 6H-SiC by traveling solvent method. : Materials Science Forum (巻 679-680, pp. 36-39). (Materials Science Forum; 巻数 679-680). https://doi.org/10.4028/www.scientific.net/MSF.679-680.36