Crystal growth of 4H-SiC on 6H-SiC by traveling solvent method

Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Koji Moriguchi, Nobuhiro Okada

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
ページ36-39
ページ数4
679-680
DOI
出版ステータスPublished - 2011
外部発表はい
イベント8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 - Oslo, Norway
継続期間: 2010 8 292010 9 2

出版物シリーズ

名前Materials Science Forum
679-680
ISSN(印刷版)02555476

Other

Other8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
国/地域Norway
CityOslo
Period10/8/2910/9/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学
  • 材料力学

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