Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study

Toru Ujihara*, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

*この研究の対応する著者

研究成果: Article査読

28 被引用数 (Scopus)

抄録

Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.

本文言語English
ページ(範囲)206-209
ページ数4
ジャーナルThin Solid Films
476
1
DOI
出版ステータスPublished - 2005 4月 1
外部発表はい

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 凝縮系物理学
  • 表面および界面

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