Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution

K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihara, K. Nakajima

研究成果: Conference contribution

24 被引用数 (Scopus)

抄録

The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under the temperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm ·280mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolution x-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray "-rocking curves of the solution grown SiC showed single peak with high peak intensity ,while that of the seed crystal showed several peaks due to the misoriented domains. Moreover, it was found that the number of etch-pit in the grown crystal is much less than that in the seed crystal and it decreases with the increase of the growth thickness. These results indicate that the crystalline quality of grown crystal was significantly improved during the solution growth.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
ページ13-16
ページ数4
483-485
出版ステータスPublished - 2005
外部発表はい
イベント5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
継続期間: 2004 8 312004 9 4

出版物シリーズ

名前Materials Science Forum
483-485
ISSN(印刷版)02555476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
国/地域Italy
CityBologna
Period04/8/3104/9/4

ASJC Scopus subject areas

  • 材料科学(全般)

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