Crystalline structures of YAlO3 single crystal at high temperatures

Takahiro Inoue, Takaaki Morimoto, Shoji Kaneko, Yosuke Horii, Yoshimichi Ohki

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

In order to clarify the influence of high temperature annealing on a next-generation gate insulating material YAlO3, single crystal YAlO3 samples were annealed at various temperatures from 900 to 1300°C in air for about 12 hours. The crystalline structure was examined by X-ray diffractometry, while the surface profile was examined by atomic force microscopy and a surface profilometer. Furthermore, infrared absorption spectroscopy and optical microscopy were used. As a result, the following serial changes in structure were estimated. The perovskite structure of crystalline YAlO3 starts to collapse and Y3Al5O 12 (YAG) is formed by the annealing at 1160 °C. Then, it segregates to Al2O3 andYAlO3 after the annealing at 1300 °C.

本文言語English
ホスト出版物のタイトルProceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
出版社Institute of Electrical Engineers of Japan
ページ208-211
ページ数4
ISBN(印刷版)9784886860866
DOI
出版ステータスPublished - 2014 1 1
イベント2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 - Niigata, Japan
継続期間: 2014 6 12014 6 5

出版物シリーズ

名前Proceedings of the International Symposium on Electrical Insulating Materials

Other

Other2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
国/地域Japan
CityNiigata
Period14/6/114/6/5

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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