Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution

K. Kamei, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, H. Daikoku, M. Kado, H. Suzuki, H. Sakamoto, T. Bessho

研究成果: Conference contribution

24 引用 (Scopus)

抜粋

Crystallinity of 4H-SiC bulk crystals obtained by solution growth technique was characterized mainly by KOH etching of the off-ground and serially ground specimens. Marked reduction of basal plane dislocations, threading edge and screw dislocations during the growth of the on-axis crystal was confirmed. Cross-sectional TEM observation revealed the rapid reduction behavior of threading dislocations microscopically. AFM observation of as-grown morphology showed that screw dislocation dipoles are related to the reduction of threading screw dislocations and single domain formation, which is essential for establishing the high crystallinity.

元の言語English
ホスト出版物のタイトルMaterials Science Forum
ページ45-48
ページ数4
717-720
DOI
出版物ステータスPublished - 2012
外部発表Yes
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
継続期間: 2011 9 112011 9 16

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷物)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
United States
Cleveland, OH
期間11/9/1111/9/16

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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  • これを引用

    Kamei, K., Kusunoki, K., Yashiro, N., Okada, N., Moriguchi, K., Daikoku, H., Kado, M., Suzuki, H., Sakamoto, H., & Bessho, T. (2012). Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution. : Materials Science Forum (巻 717-720, pp. 45-48). (Materials Science Forum; 巻数 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.45