Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution

K. Kamei*, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, H. Daikoku, M. Kado, H. Suzuki, H. Sakamoto, T. Bessho

*この研究の対応する著者

研究成果: Conference contribution

29 被引用数 (Scopus)

抄録

Crystallinity of 4H-SiC bulk crystals obtained by solution growth technique was characterized mainly by KOH etching of the off-ground and serially ground specimens. Marked reduction of basal plane dislocations, threading edge and screw dislocations during the growth of the on-axis crystal was confirmed. Cross-sectional TEM observation revealed the rapid reduction behavior of threading dislocations microscopically. AFM observation of as-grown morphology showed that screw dislocation dipoles are related to the reduction of threading screw dislocations and single domain formation, which is essential for establishing the high crystallinity.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
ページ45-48
ページ数4
717-720
DOI
出版ステータスPublished - 2012
外部発表はい
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
継続期間: 2011 9月 112011 9月 16

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷版)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
国/地域United States
CityCleveland, OH
Period11/9/1111/9/16

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学
  • 材料力学

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