Crystallization behavior during transparent In2O3-ZnO film growth

Junjun Jia, Shin ichi Nakamura, Yuzo Shigesato*

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Structural evolution of transparent conductive In2O3-ZnO (IZO) films with increasing substrate temperature during sputtering was studied using transmission electron microscopy (TEM) and spectroscopic ellipsometry. Increasing the substrate temperature can induce film crystallization in the initial growth stage, and enhance the crystallization of IZO films. Extensive simulations using ellipsometry data demonstrated a decrease in the crystallization rate for IZO films deposited between 200 and 300 °C, which is attributed to the influence of the interference between nearby growing grains. TEM observations also reveal that the growth competition between different crystallites leads to an increase in the lateral grain size with increasing substrate temperature.

本文言語English
ページ(範囲)2291-2295
ページ数5
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
213
9
DOI
出版ステータスPublished - 2016 9月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Crystallization behavior during transparent In2O3-ZnO film growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル