For the synthesis of novel group-IV semiconductors, crystalline growth of amorphous Si1-xSnx and Si1-x-ySnxCy layers in Si formed by Sn and C ion implantation has been investigated with solid phase epitaxial growth (SPEG) and ion-beam-induced epitaxial crystallization (IBIEC). Si(100) wafers were implanted at RT with 110 keV or 270 keV 120Sn ions to a dose up to x = 0.03 at peak concentration and 17 keV or 35 keV 12C ions up to y = 0.025 at peak concentration. SPEG experiments at 750°C have shown epitaxial crystallization of the strained alloy layer in the Si1-xSnx/Si sample (x = 0.03) and strain-compensated layer in the Si1-x-ySnxCy/Si sample with medium C concentration (* = 0.03 and y = 0.019). IBIEC experiments performed with 400 keV Ar ions at 350°C have also induced epitaxial crystallization for the Si1-xSnx/Si sample (x= 0.025), whereas those of Si1-x-ySnxCy (x = 0.025 and y = 0.014) have shown a collapse of epitaxial growth. Photoluminescence (PL) from SPEG-grown Si1-xSnx and Si1-x-ySnxCy samples has shown neither prominent I1 nor G peaks. Present results have revealed features in crystalline growth properties, in both techniques, for the non-thermal equilibrium fabrication of these new alloy semiconductors.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版ステータス||Published - 1997 1|
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