Crystallization process of Sr_0.7Bi_2.3Ta₂O₉ thin films with different crystal orientation prepared by chemical liquid deposition using alkoxide precursor

Engineering & Materials Science

• Crystal orientation 100%
• Crystallization 78%
• Thin films 68%
• Bismuth 64%
• Fluorspar 52%
• Liquids 48%
• Leakage currents 34%
• Current density 31%
• Crystal microstructure 30%
• Heat treatment 27%
• Electric fields 22%
• Phase boundaries 22%
• Ferroelectric films 14%
• Ferroelectric thin films 14%
• Crystal growth 11%
• Single crystals 9%
• Nucleation 8%

Chemical Compounds

• Crystal Orientation 91%
• Crystallization 50%
• Liquid 39%
• Leakage Current 37%
• Liquid Film 34%
• Fluorite 34%
• Heat Treatment 24%
• Current Density 21%
• Electric Field 19%
• Phase Interface 16%
• Grain Size 13%
• Amorphous Material 9%
• Crystal Growth 7%
• Nucleation 5%
• Single Crystalline Solid 5%