抄録
Ag(Ga,Al)Te2 layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2 mixture or AgAlTe2/Ga2Te3 mixture. The crystallographic property of Ag(Ga,Al)Te2 layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga1-x,Alx)Te2 was feasible by varying the source mole ratio Al/(Ga+Al). (
本文言語 | English |
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ページ(範囲) | 413-416 |
ページ数 | 4 |
ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |
巻 | 13 |
号 | 7-9 |
DOI | |
出版ステータス | Published - 2016 7月 1 |
ASJC Scopus subject areas
- 凝縮系物理学