Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition

Hiroyuki Kuwae, Kosuke Yamada, Wataru Momose, Shuichi Shoji, Jun Mizuno

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.

本文言語English
ホスト出版物のタイトル2019 International Conference on Electronics Packaging, ICEP 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ207-211
ページ数5
ISBN(電子版)9784990218867
DOI
出版ステータスPublished - 2019 4
イベント2019 International Conference on Electronics Packaging, ICEP 2019 - Niigata, Japan
継続期間: 2019 4 172019 4 20

出版物シリーズ

名前2019 International Conference on Electronics Packaging, ICEP 2019

Conference

Conference2019 International Conference on Electronics Packaging, ICEP 2019
国/地域Japan
CityNiigata
Period19/4/1719/4/20

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 金属および合金

フィンガープリント

「Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル