Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition

Hiroyuki Kuwae, Kosuke Yamada, Wataru Momose, Shuichi Shoji, Jun Mizuno

研究成果: Conference contribution

1 引用 (Scopus)

抄録

A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.

元の言語English
ホスト出版物のタイトル2019 International Conference on Electronics Packaging, ICEP 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ207-211
ページ数5
ISBN(電子版)9784990218867
DOI
出版物ステータスPublished - 2019 4 1
イベント2019 International Conference on Electronics Packaging, ICEP 2019 - Niigata, Japan
継続期間: 2019 4 172019 4 20

出版物シリーズ

名前2019 International Conference on Electronics Packaging, ICEP 2019

Conference

Conference2019 International Conference on Electronics Packaging, ICEP 2019
Japan
Niigata
期間19/4/1719/4/20

Fingerprint

Atomic layer deposition
Metalloids
Beer
Metals
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys

これを引用

Kuwae, H., Yamada, K., Momose, W., Shoji, S., & Mizuno, J. (2019). Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition. : 2019 International Conference on Electronics Packaging, ICEP 2019 (pp. 207-211). [8733483] (2019 International Conference on Electronics Packaging, ICEP 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEP.2019.8733483

Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition. / Kuwae, Hiroyuki; Yamada, Kosuke; Momose, Wataru; Shoji, Shuichi; Mizuno, Jun.

2019 International Conference on Electronics Packaging, ICEP 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 207-211 8733483 (2019 International Conference on Electronics Packaging, ICEP 2019).

研究成果: Conference contribution

Kuwae, H, Yamada, K, Momose, W, Shoji, S & Mizuno, J 2019, Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition. : 2019 International Conference on Electronics Packaging, ICEP 2019., 8733483, 2019 International Conference on Electronics Packaging, ICEP 2019, Institute of Electrical and Electronics Engineers Inc., pp. 207-211, 2019 International Conference on Electronics Packaging, ICEP 2019, Niigata, Japan, 19/4/17. https://doi.org/10.23919/ICEP.2019.8733483
Kuwae H, Yamada K, Momose W, Shoji S, Mizuno J. Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition. : 2019 International Conference on Electronics Packaging, ICEP 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 207-211. 8733483. (2019 International Conference on Electronics Packaging, ICEP 2019). https://doi.org/10.23919/ICEP.2019.8733483
Kuwae, Hiroyuki ; Yamada, Kosuke ; Momose, Wataru ; Shoji, Shuichi ; Mizuno, Jun. / Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition. 2019 International Conference on Electronics Packaging, ICEP 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 207-211 (2019 International Conference on Electronics Packaging, ICEP 2019).
@inproceedings{c5fb501c6a314bf4a7ff4bcebbc9d937,
title = "Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition",
abstract = "A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.",
keywords = "atomic layer deposition, Cu-Cu bonding, metal intermidiate layer, thermo compression bonding",
author = "Hiroyuki Kuwae and Kosuke Yamada and Wataru Momose and Shuichi Shoji and Jun Mizuno",
year = "2019",
month = "4",
day = "1",
doi = "10.23919/ICEP.2019.8733483",
language = "English",
series = "2019 International Conference on Electronics Packaging, ICEP 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "207--211",
booktitle = "2019 International Conference on Electronics Packaging, ICEP 2019",

}

TY - GEN

T1 - Cu-Cu Quasi-Direct Bonding with Atomically Thin-Au and Pt Intermediate Layer Using Atomic Layer Deposition

AU - Kuwae, Hiroyuki

AU - Yamada, Kosuke

AU - Momose, Wataru

AU - Shoji, Shuichi

AU - Mizuno, Jun

PY - 2019/4/1

Y1 - 2019/4/1

N2 - A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.

AB - A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips.

KW - atomic layer deposition

KW - Cu-Cu bonding

KW - metal intermidiate layer

KW - thermo compression bonding

UR - http://www.scopus.com/inward/record.url?scp=85068342508&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068342508&partnerID=8YFLogxK

U2 - 10.23919/ICEP.2019.8733483

DO - 10.23919/ICEP.2019.8733483

M3 - Conference contribution

T3 - 2019 International Conference on Electronics Packaging, ICEP 2019

SP - 207

EP - 211

BT - 2019 International Conference on Electronics Packaging, ICEP 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -