Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes

N. Banno, T. Sakamoto, H. Hada, N. Kasai, N. Iguchi, H. Imai, S. Fujieda, T. Ichihashi, T. Hasegawa, M. Aono

研究成果: Conference contribution

8 被引用数 (Scopus)

抄録

For stability against the thermal budget of the CMOS BEOL process, we developed a new solid-electrolyte switch that uses a SiO2-Ta 2O5 composite as the electrolyte. This switch has high thermal stability because thermal diffusion of Cu+ ions is suppressed in the composite. Moreover, its switching characteristics after thermal annealing are similar to those of a Ta2O5 switch without annealing. The switch with the SiO2-Ta2O5 composite electrolyte has good ON-state durability against DC current stress; its durability is comparable to that of a single via in interconnects. The switch can be implemented in the local interconnection layers of LSIs.

本文言語English
ホスト出版物のタイトル2009 IEEE International Reliability Physics Symposium, IRPS 2009
ページ395-399
ページ数5
DOI
出版ステータスPublished - 2009 11 12
外部発表はい
イベント2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
継続期間: 2009 4 262009 4 30

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
ISSN(印刷版)1541-7026

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
国/地域Canada
CityMontreal, QC
Period09/4/2609/4/30

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

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