Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes

N. Banno, T. Sakamoto, H. Hada, N. Kasai, N. Iguchi, H. Imai, S. Fujieda, T. Ichihashi, Tsuyoshi Hasegawa, M. Aono

研究成果: Conference contribution

7 引用 (Scopus)

抄録

For stability against the thermal budget of the CMOS BEOL process, we developed a new solid-electrolyte switch that uses a SiO2-Ta 2O5 composite as the electrolyte. This switch has high thermal stability because thermal diffusion of Cu+ ions is suppressed in the composite. Moreover, its switching characteristics after thermal annealing are similar to those of a Ta2O5 switch without annealing. The switch with the SiO2-Ta2O5 composite electrolyte has good ON-state durability against DC current stress; its durability is comparable to that of a single via in interconnects. The switch can be implemented in the local interconnection layers of LSIs.

元の言語English
ホスト出版物のタイトルIEEE International Reliability Physics Symposium Proceedings
ページ395-399
ページ数5
DOI
出版物ステータスPublished - 2009
外部発表Yes
イベント2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
継続期間: 2009 4 262009 4 30

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
Canada
Montreal, QC
期間09/4/2609/4/30

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Solid electrolytes
Switches
Ions
Composite materials
Durability
Electrolytes
Annealing
Thermal diffusion
Thermodynamic stability
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Banno, N., Sakamoto, T., Hada, H., Kasai, N., Iguchi, N., Imai, H., ... Aono, M. (2009). Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes. : IEEE International Reliability Physics Symposium Proceedings (pp. 395-399). [5173285] https://doi.org/10.1109/IRPS.2009.5173285

Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes. / Banno, N.; Sakamoto, T.; Hada, H.; Kasai, N.; Iguchi, N.; Imai, H.; Fujieda, S.; Ichihashi, T.; Hasegawa, Tsuyoshi; Aono, M.

IEEE International Reliability Physics Symposium Proceedings. 2009. p. 395-399 5173285.

研究成果: Conference contribution

Banno, N, Sakamoto, T, Hada, H, Kasai, N, Iguchi, N, Imai, H, Fujieda, S, Ichihashi, T, Hasegawa, T & Aono, M 2009, Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes. : IEEE International Reliability Physics Symposium Proceedings., 5173285, pp. 395-399, 2009 IEEE International Reliability Physics Symposium, IRPS 2009, Montreal, QC, Canada, 09/4/26. https://doi.org/10.1109/IRPS.2009.5173285
Banno N, Sakamoto T, Hada H, Kasai N, Iguchi N, Imai H その他. Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes. : IEEE International Reliability Physics Symposium Proceedings. 2009. p. 395-399. 5173285 https://doi.org/10.1109/IRPS.2009.5173285
Banno, N. ; Sakamoto, T. ; Hada, H. ; Kasai, N. ; Iguchi, N. ; Imai, H. ; Fujieda, S. ; Ichihashi, T. ; Hasegawa, Tsuyoshi ; Aono, M. / Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes. IEEE International Reliability Physics Symposium Proceedings. 2009. pp. 395-399
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