Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Kazuo Tsugawa, Sadanori Yamanaka, Daisuke Takeuchi, Hideyo Okushi, Hiroshi Kawarada

研究成果: Article査読

37 被引用数 (Scopus)

抄録

High-performance metal-insulator-semiconductor field-effect transistors (MISFET) on hydrogen-terminated homoepitaxial diamond films are demonstrated. The gate insulator is evaporated CaF2 which does not cause interface states. This is the first study of a CaF2/diamond MISFET fabricated by a self-aligned gate fabrication process by which the gate length and the source gate spacing are effectively reduced. The maximum transconductance is 86 mS/mm, which is the highest value in diamond MISFETs at present.

本文言語English
ページ(範囲)L908-L910
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
39
9 A/B
DOI
出版ステータスPublished - 2000 9月 15

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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