TY - JOUR
T1 - Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process
AU - Umezawa, Hitoshi
AU - Taniuchi, Hirotada
AU - Arima, Takuya
AU - Tachiki, Minoru
AU - Tsugawa, Kazuo
AU - Yamanaka, Sadanori
AU - Takeuchi, Daisuke
AU - Okushi, Hideyo
AU - Kawarada, Hiroshi
PY - 2000/9/15
Y1 - 2000/9/15
N2 - High-performance metal-insulator-semiconductor field-effect transistors (MISFET) on hydrogen-terminated homoepitaxial diamond films are demonstrated. The gate insulator is evaporated CaF2 which does not cause interface states. This is the first study of a CaF2/diamond MISFET fabricated by a self-aligned gate fabrication process by which the gate length and the source gate spacing are effectively reduced. The maximum transconductance is 86 mS/mm, which is the highest value in diamond MISFETs at present.
AB - High-performance metal-insulator-semiconductor field-effect transistors (MISFET) on hydrogen-terminated homoepitaxial diamond films are demonstrated. The gate insulator is evaporated CaF2 which does not cause interface states. This is the first study of a CaF2/diamond MISFET fabricated by a self-aligned gate fabrication process by which the gate length and the source gate spacing are effectively reduced. The maximum transconductance is 86 mS/mm, which is the highest value in diamond MISFETs at present.
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U2 - 10.1143/jjap.39.l908
DO - 10.1143/jjap.39.l908
M3 - Article
AN - SCOPUS:0034268621
SN - 0021-4922
VL - 39
SP - L908-L910
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9 A/B
ER -