Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga, Mn)As/GaAs/(Ga, Mn)As tunnel junction

D. Chiba, Y. Sato, T. Kita, F. Matsukura, H. Ohno*

*この研究の対応する著者

研究成果: Article査読

144 被引用数 (Scopus)

抄録

The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.

本文言語English
論文番号216602
ジャーナルPhysical Review Letters
93
21
DOI
出版ステータスPublished - 2004 11月 19
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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