The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.
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