Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation

T. Kamioka, H. Imai, Y. Kamakura, K. Ohmori, K. Shiraishi, M. Niwa, K. Yamada, T. Watanabe

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge variation due to the current fluctuation clearly shows the universality with respect to the total amount of the transported charge. It concludes that the current fluctuation becomes a dominant noise source over 100 GHz range.

本文言語English
ホスト出版物のタイトル2012 IEEE International Electron Devices Meeting, IEDM 2012
ページ17.2.1-17.2.4
DOI
出版ステータスPublished - 2012 12 1
外部発表はい
イベント2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
継続期間: 2012 12 102012 12 13

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
国/地域United States
CitySan Francisco, CA
Period12/12/1012/12/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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