Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer

Y. Kuroki, H. Sakakibara, H. Ando, S. Kawai, T. Hajiri, K. Ueda, H. Asano

研究成果: Conference contribution

抄録

Recently, current-induced spin transfer torque is attracting interest because it affects not only a FM but also an AFM [1, 2]. Furthermore, the critical current for AFM switching is more than 10-2 times smaller than typical value for a FM [1]. Therefore, FM/AFM bilayers containing half-metallic FMs are desirable for studying current-induced magnetization switching and spin torque in AFM materials. Up to now, we focused on antiperovskite nitride [3, 4] because there are many combinations of elements that form the antiperovskite nitride such a AFM materials and half-metallic FM. Anti-perovskite FM nitride Co3FeN is predicted that it has high negative spin polarization [3, 4]. Anti-perovskite AFM nitride Mn3GaN exhibits many interesting properties, such as piezomagnetic [5]. For Mn3GaN/Co3FeN bilayer, we expect application to the new devices controlling magnetic moments of Mn3GaN by spin transfer torque. In this study, we investigated current-induced magnetization switching in Mn3GaN/Co3FeN epitaxial exchange-coupled bilayers by employing AMR effect. We shall discuss spin transfer torque in antiferromagnetic Mn3 GaN.

本文言語English
ホスト出版物のタイトル2015 IEEE International Magnetics Conference, INTERMAG 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479973224
DOI
出版ステータスPublished - 2015 7月 14
外部発表はい
イベント2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
継続期間: 2015 5月 112015 5月 15

出版物シリーズ

名前2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
国/地域China
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学
  • 表面、皮膜および薄膜

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