DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiN_x

Physics & Astronomy

• high electron mobility transistors 86%
• direct current 65%
• microwaves 56%
• passivity 38%
• performance 36%
• radiant flux density 25%
• sapphire 23%
• power efficiency 16%
• continuous radiation 12%
• time lag 11%
• cut-off 11%
• vapor deposition 10%
• cooling 9%
• oscillations 8%
• output 8%
• room temperature 7%

Engineering & Materials Science

• High electron mobility transistors 96%
• Microwaves 73%
• Passivation 50%
• Sapphire 37%
• Plasma enhanced chemical vapor deposition 19%
• Substrates 19%
• Cutoff frequency 16%
• Cooling 9%
• Temperature 5%

Chemical Compounds

• Electron Mobility 100%
• Microwave 67%
• Chemical Passivation 42%
• Fluorescence Maxima 18%
• Plasma Enhanced Chemical Vapour Deposition 16%
• Cooling 12%
• Length 8%
• Ambient Reaction Temperature 7%