Al2O3/Si3́N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. In an HFET with a gate length (Lg) of 0.1 μm, the cutoff frequency (fT) and maximum oscillation frequency (fmax) were estimated to be 70 and 90 GHz, respectively. The drain current density (Id) and transconductance (gm) were 1.30 A/mm and 293mS/mm, respectively. The gate leakage current (Ig) was as low as 4 × 10-5 A/mm even at a forward bias voltage of +3 V.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版物ステータス||Published - 2005|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)