DC and RF characteristics in Al2O3/Si 3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors

Narihiko Maeda*, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

*この研究の対応する著者

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Al2O3/Si3́N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. In an HFET with a gate length (Lg) of 0.1 μm, the cutoff frequency (fT) and maximum oscillation frequency (fmax) were estimated to be 70 and 90 GHz, respectively. The drain current density (Id) and transconductance (gm) were 1.30 A/mm and 293mS/mm, respectively. The gate leakage current (Ig) was as low as 4 × 10-5 A/mm even at a forward bias voltage of +3 V.

本文言語English
ページ(範囲)L646-L648
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
20-23
DOI
出版ステータスPublished - 2005
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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