DC and RF characteristics in Al2O3/Si 3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors

Narihiko Maeda, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

研究成果: Article

14 引用 (Scopus)

抜粋

Al2O3/Si3́N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. In an HFET with a gate length (Lg) of 0.1 μm, the cutoff frequency (fT) and maximum oscillation frequency (fmax) were estimated to be 70 and 90 GHz, respectively. The drain current density (Id) and transconductance (gm) were 1.30 A/mm and 293mS/mm, respectively. The gate leakage current (Ig) was as low as 4 × 10-5 A/mm even at a forward bias voltage of +3 V.

元の言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
発行部数20-23
DOI
出版物ステータスPublished - 2005
外部発表Yes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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