DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor

Hiroaki Ishizaka*, Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

25 被引用数 (Scopus)

抄録

A 0.7-μm-gate-length metal-insulator-semiconductor field effect transistor (MISFET) was fabricated on a hydrogen-terminated diamond surface conductive layer. The maximum transconductance of 100 mS/mm was obtained by DC measurement. The cut-off frequency of 11 GHz and the maximum frequency of oscillation of 18 GHz were achieved for the fabricated MISFET biased at VGS=0 V and VDS= -12 V. These are the highest values for diamond MISFETs ever reported. In the MISFET, high-frequency small-signal equivalent circuit analysis is carried out at VGS=O V and VDS= -3, -5, -8, -10 and -12 V. The analysis indicates that the reduction of parasitic resistance between the source and gate is necessary for realizing higher output power.

本文言語English
ページ(範囲)378-381
ページ数4
ジャーナルDiamond and Related Materials
11
3-6
DOI
出版ステータスPublished - 2002 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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