DC and RF characterization of RF MOSFET embedding structure

Atsushi Takeshige, Kosuke Katayama, Shuhei Amakawa, Kyoya Takano, Takeshi Yoshida, Minoru Fujishima

研究成果: Conference contribution

抄録

It is not so easy to correlate DC Kelvin measurement data of an RF transistor and its non-Kelvin RF measurement data, because the actual bias voltages in the latter are not known precisely. Knowing the bias voltages requires accurate characterization of its embedding structure. This paper reports on an attempt at correlating DC and RF measurements of parasitic resistances associated with a MOSFET test structure, including a transmission line, on a CMOS chip.

本文言語English
ホスト出版物のタイトル2017 International Conference of Microelectronic Test Structures, ICMTS 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509036158
DOI
出版ステータスPublished - 2017 6月 20
外部発表はい
イベント2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, France
継続期間: 2017 3月 272017 3月 30

出版物シリーズ

名前IEEE International Conference on Microelectronic Test Structures

Other

Other2017 International Conference of Microelectronic Test Structures, ICMTS 2017
国/地域France
CityGrenoble
Period17/3/2717/3/30

ASJC Scopus subject areas

  • 電子工学および電気工学

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