De-bondable SiC–SiC wafer bonding via an intermediate Ni nano-film

Engineering & Materials Science

• Wafer bonding 100%
• Silicon carbide 75%
• Nickel 65%
• Rapid thermal annealing 64%
• Amorphous silicon 19%
• Annealing 13%
• Carbon 10%
• Fabrication 10%
• Substrates 9%
• Temperature 5%

Chemical Compounds

• Silicon Carbide 78%
• Rapid Thermal Annealing 62%
• Atomic Diffusion 22%
• Amorphous Silicon 19%
• Annealing 11%
• Strength 8%
• Pressure 8%
• Ambient Reaction Temperature 7%

Physics & Astronomy

• nickel 56%
• wafers 52%
• silicon carbides 33%
• annealing 16%
• pulling 8%
• amorphous silicon 6%
• carbon 4%
• fabrication 4%
• room temperature 3%