Deep level transient spectroscopy analysis of an anatase epitaxial film grown by metal organic chemical vapor deposition

Takahira Miyagi*, Tomoyuki Ogawa, Masayuki Kamei, Yoshiki Wada, Takefumi Mitsuhashi, Atsushi Yamazaki, Eiji Ohta, Tetsuya Sato

*この研究の対応する著者

研究成果: Article査読

18 被引用数 (Scopus)

抄録

The deep level transient spectroscopy (DLTS) study of anatase-type TiO2 material was performed for the first time. The anatase film was epitaxialy grown on a conductive Nb-doped single-crystalline SrTiO3 (100) substrate by metal organic chemical vapor deposition. The photoluminescence characteristics of this anatase film were identical to those in previous reports, where they were attributed to the radiative recombination of self-trapped excitons. According to the DLTS analysis, it was revealed that this anatase film had a characteristic deep level located at 0.96 eV below the bottom of the conduction band with large concentration (6.5 × 1016/cm3) and capture cross section (8.3 × 10-13 cm2. Since the capture cross section of this level appeared to be too large to be caused by point defects, the origin of this deep level was attributed to line defects such as dislocations.

本文言語English
ページ(範囲)L404-L406
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
40
4 B
DOI
出版ステータスPublished - 2001 4 15

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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