Deep level defect states in InP metal/oxide/semiconductor (MOS) diode structures prepared from n-type vapor phase epitaxial material were determined by transient capacitance spectroscopy. In unannealed MOS diodes a total of three bulk traps were observed with energies of Ec-0.44, Ec-0.53 and Ec-0.80 eV. The interface state density was found to be continuous in the range of Ec-0.14 eV≤E*≤Ec-0.44 eV and increased toward the midgap. The capture cross section prefactor of the interface states was of the order of 10-16 cm2 and was independent of energy in the energy range from Ec-0.30 to Ec-0.44 eV.
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