Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

Masahide Inuishi, Bruce W. Wessels

研究成果: Article査読

19 被引用数 (Scopus)

抄録

Deep level defect states in InP metal/oxide/semiconductor (MOS) diode structures prepared from n-type vapor phase epitaxial material were determined by transient capacitance spectroscopy. In unannealed MOS diodes a total of three bulk traps were observed with energies of Ec-0.44, Ec-0.53 and Ec-0.80 eV. The interface state density was found to be continuous in the range of Ec-0.14 eV≤E*≤Ec-0.44 eV and increased toward the midgap. The capture cross section prefactor of the interface states was of the order of 10-16 cm2 and was independent of energy in the energy range from Ec-0.30 to Ec-0.44 eV.

本文言語English
ページ(範囲)141-153
ページ数13
ジャーナルThin Solid Films
103
1-3
DOI
出版ステータスPublished - 1983
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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