Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

S. Venkatesan, R. F. Pierret, J. Qiu, M. Kobayashi, R. L. Gunshor, L. A. Kolodziejski

研究成果: Article

19 引用 (Scopus)

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Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.

元の言語English
ページ(範囲)3656-3660
ページ数5
ジャーナルJournal of Applied Physics
66
発行部数8
DOI
出版物ステータスPublished - 1989 12 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

これを引用

Venkatesan, S., Pierret, R. F., Qiu, J., Kobayashi, M., Gunshor, R. L., & Kolodziejski, L. A. (1989). Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy. Journal of Applied Physics, 66(8), 3656-3660. https://doi.org/10.1063/1.344077