Deep sub-micron gate diamond MISFETs

Hiroki Matsudaira, Arima Takuya, Hitoshi Umezawa, Shingo Miyamoto, Hiroaki Ishizaka, Minoru Tachiki, Hiroshi Kawarada

研究成果: Article

11 引用 (Scopus)

抜粋

The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

元の言語English
ページ(範囲)1814-1818
ページ数5
ジャーナルDiamond and Related Materials
12
発行部数10-11
DOI
出版物ステータスPublished - 2003 1 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • これを引用

    Matsudaira, H., Takuya, A., Umezawa, H., Miyamoto, S., Ishizaka, H., Tachiki, M., & Kawarada, H. (2003). Deep sub-micron gate diamond MISFETs. Diamond and Related Materials, 12(10-11), 1814-1818. https://doi.org/10.1016/S0925-9635(03)00273-5