Deep sub-micron gate diamond MISFETs

Hiroki Matsudaira, Arima Takuya, Hitoshi Umezawa, Shingo Miyamoto, Hiroaki Ishizaka, Minoru Tachiki, Hiroshi Kawarada

    研究成果: Article

    11 引用 (Scopus)

    抄録

    The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

    元の言語English
    ページ(範囲)1814-1818
    ページ数5
    ジャーナルDiamond and Related Materials
    12
    発行部数10-11
    DOI
    出版物ステータスPublished - 2003 10

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    Diamond
    Diamonds
    field effect transistors
    diamonds
    Transconductance
    transconductance
    Field effect transistors
    alternating current
    tendencies
    direct current
    insulators

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    これを引用

    Matsudaira, H., Takuya, A., Umezawa, H., Miyamoto, S., Ishizaka, H., Tachiki, M., & Kawarada, H. (2003). Deep sub-micron gate diamond MISFETs. Diamond and Related Materials, 12(10-11), 1814-1818. https://doi.org/10.1016/S0925-9635(03)00273-5

    Deep sub-micron gate diamond MISFETs. / Matsudaira, Hiroki; Takuya, Arima; Umezawa, Hitoshi; Miyamoto, Shingo; Ishizaka, Hiroaki; Tachiki, Minoru; Kawarada, Hiroshi.

    :: Diamond and Related Materials, 巻 12, 番号 10-11, 10.2003, p. 1814-1818.

    研究成果: Article

    Matsudaira, H, Takuya, A, Umezawa, H, Miyamoto, S, Ishizaka, H, Tachiki, M & Kawarada, H 2003, 'Deep sub-micron gate diamond MISFETs', Diamond and Related Materials, 巻. 12, 番号 10-11, pp. 1814-1818. https://doi.org/10.1016/S0925-9635(03)00273-5
    Matsudaira H, Takuya A, Umezawa H, Miyamoto S, Ishizaka H, Tachiki M その他. Deep sub-micron gate diamond MISFETs. Diamond and Related Materials. 2003 10;12(10-11):1814-1818. https://doi.org/10.1016/S0925-9635(03)00273-5
    Matsudaira, Hiroki ; Takuya, Arima ; Umezawa, Hitoshi ; Miyamoto, Shingo ; Ishizaka, Hiroaki ; Tachiki, Minoru ; Kawarada, Hiroshi. / Deep sub-micron gate diamond MISFETs. :: Diamond and Related Materials. 2003 ; 巻 12, 番号 10-11. pp. 1814-1818.
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    abstract = "The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.",
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    AU - Matsudaira, Hiroki

    AU - Takuya, Arima

    AU - Umezawa, Hitoshi

    AU - Miyamoto, Shingo

    AU - Ishizaka, Hiroaki

    AU - Tachiki, Minoru

    AU - Kawarada, Hiroshi

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