A novel isolation technology, called buried insulator between source/drain polysilicon (BIPS), is described. The BIPS isolation structure consists of refilling CVD (chemical vapor deposition) oxides in openings between source/drain polysilicon patterns by double photoresist etchback. A defect- and bird's-beak-free process can be realized by this isolation. Devices with BIPS isolation are compared with LOCOS (local oxidation of silicon) with respect to isolation parasitic effects and current drive capability. A 0.5-μm isolation is achieved, and the narrow channel effects are almost supressed with BIPS isolation. The subthreshold characteristics of devices with BIPS isolation give the same shape value as those for conventional devices with LOCOS isolation. A ring oscillator with BIPS isolation exhibits a propagation delay time of 69 ps/gate.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 1988 12月 1|
|イベント||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
継続期間: 1988 12月 11 → 1988 12月 14
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