Deep submicron device isolation with buried insulator between source/drain polysilicon (BIPS)

Engineering & Materials Science

• Polysilicon 100%
• Oxidation 51%
• Silicon 45%
• Photoresists 36%
• Chemical vapor deposition 33%
• Birds 33%
• Oxides 24%
• Time delay 23%
• Defects 19%

Chemical Compounds

• Nonconductor 97%
• Parasitic 53%
• Oxidation Reaction 39%
• Chemical Vapour Deposition 38%
• Shape 28%
• Oxide 23%
• Time 15%

Physics & Astronomy

• isolation 82%
• insulators 63%
• refilling 13%
• oxidation 12%
• birds 11%
• silicon 9%
• photoresists 9%
• time lag 7%
• vapor deposition 6%
• oscillators 6%
• rings 5%
• oxides 5%
• propagation 5%
• defects 4%