Deep submicron field isolation with buried insulator between polysilicon electrodes (BIPS)

Masahiro Shimizu*, Masahide Inuishi, Katsuhiro Tsukamoto, Hideaki Arima, Hirokazu Miyoshi

*この研究の対応する著者

研究成果: Article査読

抄録

A novel isolation structure which has a buried insulator between polysilicon electrodes (BIPS) has been developed. The BIPS isolation employs the refilling CVD-oxides in openings between polysilicon electrodes by photoresist etchback process. Device characteristics and parasitic effects of BIPS isolation have been compared with that of LOCOS isolation. Using BIPS isolation, we can almost suppress the narrow-channel effects and achieve the deep submicron isolation. No degradation on the subthreshold decay of devices with BIPS isolation can be obtained. The use of BIPS isolation technology yields a DRAM cell of small area. The successful fabrication of deep submicron devices with BIPS isolation clearly demonstrates that this technology has superior ability to overcome the LOCOS isolation.

本文言語English
ページ(範囲)1369-1375
ページ数7
ジャーナルIEICE Transactions on Electronics
E77-C
8
出版ステータスPublished - 1994 8月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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