抄録
ZnTe electro-optic waveguide device has a great potential for the practical applications. The introduction of low Mg% cladding layer to the ZnMgTe/ZnTe/ZnMgTe waveguide structure was performed to circumvent the effect of large lattice mismatch between ZnMgTe and ZnTe, and to improve the crystallographic properties. Various two-step index ZnTe waveguide structures were fabricated by molecular beam epitaxy. The structure with 0.1 μm (Mg 9%) interlayer and 0.6 μm (Mg 26%) cladding layer showed significant defect density reduction compared to the single-step index ZnTe waveguide (Mg 20%) due the much smaller lattice mismatch between the ZnTe core layer and the ZnMgTe interlayer. However, the average Mg content of ZnMgTe layers needs to be carefully controlled to prevent the drop of the optical confinement.
本文言語 | English |
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論文番号 | 04F104 |
ジャーナル | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
巻 | 35 |
号 | 4 |
DOI | |
出版ステータス | Published - 2017 7月 1 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 器械工学
- プロセス化学およびプロセス工学
- 表面、皮膜および薄膜
- 電子工学および電気工学
- 材料化学