Defect formation observed by AES in a‐SiO2 films prepared by photochemical vapour deposition

H. Nonaka, S. Ichimura, K. Arai, C. Le Gressus

研究成果: Article査読

16 被引用数 (Scopus)

抄録

Damageless conditions in AES measurement were examined carefully on both thermally oxidized and photochemical vapour deposited amorphous SiO2 films as a function of dose rate and total dose. The lower dose rate resulted in the formation of a higher density of oxygen‐deficient defects under the constant total dose condition. Among the films examined, it was found that F‐doped films prepared by photochemical vapour deposition best resisted electron damage. The results are discussed using the model of defect generation consisting of a cascade process, bond breaking and diffusion of oxygen.

本文言語English
ページ(範囲)435-439
ページ数5
ジャーナルSurface and Interface Analysis
16
1-12
DOI
出版ステータスPublished - 1990 7
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

フィンガープリント 「Defect formation observed by AES in a‐SiO<sub>2</sub> films prepared by photochemical vapour deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル