DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

Tsutomu Yoshihara, Satoshi Takano, Masafumi Kimata, Takao Nakano

研究成果: Article

6 引用 (Scopus)

抄録

Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

元の言語English
ページ(範囲)1198-1199
ページ数2
ジャーナルIEEE Transactions on Electron Devices
ED-28
発行部数10
出版物ステータスPublished - 1981 10
外部発表Yes

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ram
Alpha particles
Random access storage
alpha particles
Irradiation
degradation
Degradation
irradiation
Radiation damage
radiation damage
Defects
causes
defects
cells
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

これを引用

Yoshihara, T., Takano, S., Kimata, M., & Nakano, T. (1981). DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES. IEEE Transactions on Electron Devices, ED-28(10), 1198-1199.

DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES. / Yoshihara, Tsutomu; Takano, Satoshi; Kimata, Masafumi; Nakano, Takao.

:: IEEE Transactions on Electron Devices, 巻 ED-28, 番号 10, 10.1981, p. 1198-1199.

研究成果: Article

Yoshihara, T, Takano, S, Kimata, M & Nakano, T 1981, 'DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.', IEEE Transactions on Electron Devices, 巻. ED-28, 番号 10, pp. 1198-1199.
Yoshihara, Tsutomu ; Takano, Satoshi ; Kimata, Masafumi ; Nakano, Takao. / DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES. :: IEEE Transactions on Electron Devices. 1981 ; 巻 ED-28, 番号 10. pp. 1198-1199.
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