抄録
Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1198-1199 |
| ページ数 | 2 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | ED-28 |
| 号 | 10 |
| 出版ステータス | Published - 1981 10 |
| 外部発表 | はい |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)