抄録
Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1198-1199 |
| ページ数 | 2 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | ED-28 |
| 発行部数 | 10 |
| 出版物ステータス | Published - 1981 10 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
これを引用
DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES. / Yoshihara, Tsutomu; Takano, Satoshi; Kimata, Masafumi; Nakano, Takao.
：: IEEE Transactions on Electron Devices, 巻 ED-28, 番号 10, 10.1981, p. 1198-1199.研究成果: Article
}
TY - JOUR
T1 - DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.
AU - Yoshihara, Tsutomu
AU - Takano, Satoshi
AU - Kimata, Masafumi
AU - Nakano, Takao
PY - 1981/10
Y1 - 1981/10
N2 - Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.
AB - Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.
UR - http://www.scopus.com/inward/record.url?scp=0019625003&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0019625003&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0019625003
VL - ED-28
SP - 1198
EP - 1199
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
ER -