DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

Tsutomu Yoshihara, Satoshi Takano, Masafumi Kimata, Takao Nakano

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

本文言語English
ページ(範囲)1198-1199
ページ数2
ジャーナルIEEE Transactions on Electron Devices
ED-28
10
出版ステータスPublished - 1981 10
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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