DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

Tsutomu Yoshihara; Satoshi Takano; Masafumi Kimata; Takao Nakano

DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

Tsutomu Yoshihara^*, Satoshi Takano, Masafumi Kimata, Takao Nakano

^*この研究の対応する著者

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

本文言語	English
ページ（範囲）	1198-1199
ページ数	2
ジャーナル	IEEE Transactions on Electron Devices
巻	ED-28
号	10
出版ステータス	Published - 1981 10月
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学
物理学および天文学（その他）

他のファイルとリンク

引用スタイル

@article{d2cd9758cef840568ee3a4238ae4de2a,

title = "DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.",

abstract = "Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.",

author = "Tsutomu Yoshihara and Satoshi Takano and Masafumi Kimata and Takao Nakano",

year = "1981",

month = oct,

language = "English",

volume = "ED-28",

pages = "1198--1199",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

AU - Yoshihara, Tsutomu

AU - Takano, Satoshi

AU - Kimata, Masafumi

AU - Nakano, Takao

PY - 1981/10

Y1 - 1981/10

N2 - Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

AB - Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

UR - http://www.scopus.com/inward/record.url?scp=0019625003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019625003&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0019625003

VL - ED-28

SP - 1198

EP - 1199

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -

DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

抄録

ASJC Scopus subject areas

他のファイルとリンク

フィンガープリント

引用スタイル