Demonstration of transconductance enhancement on (110) and (001) strained-nanowire FETs

A. Seike*, H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari

*この研究の対応する著者

研究成果: Conference contribution

抄録

Enhancement of transconductance for strained nanowire transistors (s-nwFETs) on (001) and (110) planes are demonstrated by evaluating Id s-Vbg curves of the devices. Normalized transconductance, gm *, for <100> direction s-nwFETs is enhanced by a factor of 2.16 for n-type on (001) plane and 1.83 for p-type on (110) plane. This is due to the lighter effective mass of electrons/holes along the selected channel direction.

本文言語English
ホスト出版物のタイトルECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
出版社Electrochemical Society Inc.
ページ427-430
ページ数4
6
ISBN(電子版)9781607680932
ISBN(印刷版)9781566777438
DOI
出版ステータスPublished - 2009
イベント7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
継続期間: 2009 10月 52009 10月 7

出版物シリーズ

名前ECS Transactions
番号6
25
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
国/地域Austria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • 工学(全般)

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