TY - JOUR
T1 - Densification of glassy carbon by fluorine ion implantation
AU - Toida, Hiroshi
AU - Terashima, Keiichi
AU - Kobayashi, Tomohiro
AU - Osada, Minoru
AU - Watanabe, Kowashi
AU - Iwaki, Masaya
PY - 2001/4
Y1 - 2001/4
N2 - A study has been made of the surface layer modification of glassy carbon (GC) by fluorine (F) ion implantation. F+-ion implantation into GC was performed at an energy of 150 keV with doses ranging from 5 × 1014 to 5 × 1016 ions/cm2 near room temperature. The changes in structure, composition and surface morphology of implanted specimens were examined by means of Raman spectroscopy (Raman), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM), respectively. The Raman spectra for high fluences indicate the formation of amorphous carbon. The SIMS depth profiles of F-atoms are Gaussian-like distributions, and the peaks shift toward the surface as the fluence increases. The AFM measurements show that a step height of approximately 108 nm is observed at a fluence of 5 × 1016 ions/cm2. From the results of peak shifts and step heights, it is concluded that F-ion implantation into GC induces a densification of the surface layer.
AB - A study has been made of the surface layer modification of glassy carbon (GC) by fluorine (F) ion implantation. F+-ion implantation into GC was performed at an energy of 150 keV with doses ranging from 5 × 1014 to 5 × 1016 ions/cm2 near room temperature. The changes in structure, composition and surface morphology of implanted specimens were examined by means of Raman spectroscopy (Raman), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM), respectively. The Raman spectra for high fluences indicate the formation of amorphous carbon. The SIMS depth profiles of F-atoms are Gaussian-like distributions, and the peaks shift toward the surface as the fluence increases. The AFM measurements show that a step height of approximately 108 nm is observed at a fluence of 5 × 1016 ions/cm2. From the results of peak shifts and step heights, it is concluded that F-ion implantation into GC induces a densification of the surface layer.
KW - AFM
KW - Atomic density
KW - Carbon
KW - Ion implantation
KW - Raman
KW - SIMS
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U2 - 10.1016/S0168-583X(00)00645-5
DO - 10.1016/S0168-583X(00)00645-5
M3 - Article
AN - SCOPUS:0035301871
VL - 175-177
SP - 532
EP - 536
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -