Silicon carbide is one of the most important ceramics used as structural and functional materials in a wide variety of applications. Many studies have reported the densification of SiC using oxide and nonoxide additives such as the Al2O3, B4C and Al-B-C system. However, it is difficult to densify SiC at temperatures below 2000°C without sintering additives even if spark plasma sintering (SPS) is used. The authors attempted to densify SiC using colloidal processing and SPS without sintering additives. A commercially available SiC powder with the average particle size of 0.55 mm was used as the starting material. The densities of the green body prepared by slip casting and the sintered body by SPS were 65.5 and 98.7% respectively.
|ジャーナル||Advances in Applied Ceramics|
|出版ステータス||Published - 2014 2月|
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