Deoxyribonucleic-acid-sensitive polycrystalline diamond solutiongate field-effect transistor with a carboxyl-terminated borondoped channel

Yukihiro Shintani, Shoji Ibori, Hiroshi Kawarada

研究成果: Article

抄録

This paper describes a deoxyribonucleic-acid-sensitive electrolyte solution-gate field-effect transistor (SGFET) sensor utilizing a partial carboxyl-terminated boron-doped polycrystalline diamond surface as a linker to connect a deoxyribonucleic acid (DNA) probe. A high density of carboxyl termination on the polycrystalline diamond surface that was employed as a FET channel was achieved using a vacuum ultraviolet system with oxygen gas. A single-stranded DNA probe was immobilized on the polycrystalline diamond channel via amino coupling. The current-voltage characteristics of the polycrystalline diamond SGFET sensor was examined with bias voltages within its potential voltage window. The characteristics of the drain-source current verses the drain-source voltage showed a pinch-off, a shift voltage of up to 40 mV with a coefficient of variation of 4 - 11% was obtained between hybridization and denaturation. In addition, a single nucleotide mutation of DNA sequence was selectively recognized by the shift voltage up to ca. 10 mV.

元の言語English
ページ(範囲)923-927
ページ数5
ジャーナルAnalytical Sciences
35
発行部数8
DOI
出版物ステータスPublished - 2019 1 1

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Diamond
Field effect transistors
Gates (transistor)
DNA
Electric potential
Denaturation
Boron
Sensors
Current voltage characteristics
Bias voltage
Electrolytes
Nucleotides
Gases
Vacuum
Oxygen

ASJC Scopus subject areas

  • Analytical Chemistry

これを引用

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title = "Deoxyribonucleic-acid-sensitive polycrystalline diamond solutiongate field-effect transistor with a carboxyl-terminated borondoped channel",
abstract = "This paper describes a deoxyribonucleic-acid-sensitive electrolyte solution-gate field-effect transistor (SGFET) sensor utilizing a partial carboxyl-terminated boron-doped polycrystalline diamond surface as a linker to connect a deoxyribonucleic acid (DNA) probe. A high density of carboxyl termination on the polycrystalline diamond surface that was employed as a FET channel was achieved using a vacuum ultraviolet system with oxygen gas. A single-stranded DNA probe was immobilized on the polycrystalline diamond channel via amino coupling. The current-voltage characteristics of the polycrystalline diamond SGFET sensor was examined with bias voltages within its potential voltage window. The characteristics of the drain-source current verses the drain-source voltage showed a pinch-off, a shift voltage of up to 40 mV with a coefficient of variation of 4 - 11{\%} was obtained between hybridization and denaturation. In addition, a single nucleotide mutation of DNA sequence was selectively recognized by the shift voltage up to ca. 10 mV.",
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author = "Yukihiro Shintani and Shoji Ibori and Hiroshi Kawarada",
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doi = "10.2116/analsci.18P520",
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T1 - Deoxyribonucleic-acid-sensitive polycrystalline diamond solutiongate field-effect transistor with a carboxyl-terminated borondoped channel

AU - Shintani, Yukihiro

AU - Ibori, Shoji

AU - Kawarada, Hiroshi

PY - 2019/1/1

Y1 - 2019/1/1

N2 - This paper describes a deoxyribonucleic-acid-sensitive electrolyte solution-gate field-effect transistor (SGFET) sensor utilizing a partial carboxyl-terminated boron-doped polycrystalline diamond surface as a linker to connect a deoxyribonucleic acid (DNA) probe. A high density of carboxyl termination on the polycrystalline diamond surface that was employed as a FET channel was achieved using a vacuum ultraviolet system with oxygen gas. A single-stranded DNA probe was immobilized on the polycrystalline diamond channel via amino coupling. The current-voltage characteristics of the polycrystalline diamond SGFET sensor was examined with bias voltages within its potential voltage window. The characteristics of the drain-source current verses the drain-source voltage showed a pinch-off, a shift voltage of up to 40 mV with a coefficient of variation of 4 - 11% was obtained between hybridization and denaturation. In addition, a single nucleotide mutation of DNA sequence was selectively recognized by the shift voltage up to ca. 10 mV.

AB - This paper describes a deoxyribonucleic-acid-sensitive electrolyte solution-gate field-effect transistor (SGFET) sensor utilizing a partial carboxyl-terminated boron-doped polycrystalline diamond surface as a linker to connect a deoxyribonucleic acid (DNA) probe. A high density of carboxyl termination on the polycrystalline diamond surface that was employed as a FET channel was achieved using a vacuum ultraviolet system with oxygen gas. A single-stranded DNA probe was immobilized on the polycrystalline diamond channel via amino coupling. The current-voltage characteristics of the polycrystalline diamond SGFET sensor was examined with bias voltages within its potential voltage window. The characteristics of the drain-source current verses the drain-source voltage showed a pinch-off, a shift voltage of up to 40 mV with a coefficient of variation of 4 - 11% was obtained between hybridization and denaturation. In addition, a single nucleotide mutation of DNA sequence was selectively recognized by the shift voltage up to ca. 10 mV.

KW - Boron-doped diamond

KW - Carboxyl-termination

KW - Deoxyribonucleic acid

KW - Electrolyte-solution-gate field-effect transistor

KW - Polycrystalline diamond

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U2 - 10.2116/analsci.18P520

DO - 10.2116/analsci.18P520

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JO - Analytical Sciences

JF - Analytical Sciences

SN - 0910-6340

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