Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water

Takayuki Homma, Jun Tsukano, Tetsuya Osaka, Masaharu Watanabe, Kiyoshi Nagai

研究成果: Conference contribution

1 引用 (Scopus)

抄録

Spontaneous deposition of trace metal contaminants such as Cu onto silicon wafer surfaces in ultra pure water (UPW) was investigated, focusing upon the reaction pathways of their deposition processes. Scanning probe microscopy analysis revealed that 10-20 nm diameter Cu particles were formed by reductive deposition of ionic species to the metals, which was enhanced under deoxygenated condition. On the other hand, dissolved oxygen enhanced the formation of oxide layer at silicon surface as well as inclusion of the metal species into the layer to develop rougher surface. These variation in the characteristics of metal contaminants such as chemical state and dispersion condition in microscopic scale, caused by the difference in dissolved oxygen concentration, should be one of the significant issues to optimize precision device processes.

元の言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
編集者C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson
ページ670-676
ページ数7
4218
出版物ステータスPublished - 2000
イベントHigh Purity Silicon VI - Phoenix, AZ, United States
継続期間: 2000 10 222000 10 27

Other

OtherHigh Purity Silicon VI
United States
Phoenix, AZ
期間00/10/2200/10/27

Fingerprint

Silicon wafers
wafers
Dissolved oxygen
silicon
Metals
metals
Impurities
water
contaminants
Water
Scanning probe microscopy
oxygen
Silicon
Oxides
inclusions
microscopy
scanning
oxides
Trace metals
probes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

これを引用

Homma, T., Tsukano, J., Osaka, T., Watanabe, M., & Nagai, K. (2000). Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. : C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, & H. J. Dawson (版), Proceedings of SPIE - The International Society for Optical Engineering (巻 4218, pp. 670-676)

Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. / Homma, Takayuki; Tsukano, Jun; Osaka, Tetsuya; Watanabe, Masaharu; Nagai, Kiyoshi.

Proceedings of SPIE - The International Society for Optical Engineering. 版 / C.L. Claeys; P. Rai-Choudhury; M. Watanabe; P. Stallhofer; H.J. Dawson. 巻 4218 2000. p. 670-676.

研究成果: Conference contribution

Homma, T, Tsukano, J, Osaka, T, Watanabe, M & Nagai, K 2000, Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. : CL Claeys, P Rai-Choudhury, M Watanabe, P Stallhofer & HJ Dawson (版), Proceedings of SPIE - The International Society for Optical Engineering. 巻. 4218, pp. 670-676, High Purity Silicon VI, Phoenix, AZ, United States, 00/10/22.
Homma T, Tsukano J, Osaka T, Watanabe M, Nagai K. Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. : Claeys CL, Rai-Choudhury P, Watanabe M, Stallhofer P, Dawson HJ, 編集者, Proceedings of SPIE - The International Society for Optical Engineering. 巻 4218. 2000. p. 670-676
Homma, Takayuki ; Tsukano, Jun ; Osaka, Tetsuya ; Watanabe, Masaharu ; Nagai, Kiyoshi. / Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water. Proceedings of SPIE - The International Society for Optical Engineering. 編集者 / C.L. Claeys ; P. Rai-Choudhury ; M. Watanabe ; P. Stallhofer ; H.J. Dawson. 巻 4218 2000. pp. 670-676
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