Deposition mechanism of trace metals on silicon wafer surfaces in ultra pure water

Takayuki Homma*, Jun Tsukano, Tetsuya Osaka, Masaharu Watanabe, Kiyoshi Nagai

*この研究の対応する著者

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

Spontaneous deposition of trace metal contaminants such as Cu onto silicon wafer surfaces in ultra pure water (UPW) was investigated, focusing upon the reaction pathways of their deposition processes. Scanning probe microscopy analysis revealed that 10-20 nm diameter Cu particles were formed by reductive deposition of ionic species to the metals, which was enhanced under deoxygenated condition. On the other hand, dissolved oxygen enhanced the formation of oxide layer at silicon surface as well as inclusion of the metal species into the layer to develop rougher surface. These variation in the characteristics of metal contaminants such as chemical state and dispersion condition in microscopic scale, caused by the difference in dissolved oxygen concentration, should be one of the significant issues to optimize precision device processes.

本文言語English
ページ(範囲)670-676
ページ数7
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
4218
出版ステータスPublished - 2000 12 1
イベントHigh Purity Silicon VI - Phoenix, AZ, United States
継続期間: 2000 10 222000 10 27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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