Deposition of AgGaTe2 on sapphire substrates by closed space sublimation

Aya Uruno*, Ayaka Usui, Masakazu Kobayashi

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

AgGaTe2 layers were grown on a-plane sapphire substrates by a closed space sublimation method. Various samples were prepared with varied source temperature, holding time and temperature differential. The variation of source temperature was used primarily to improve the stoichiometry of the film. Grown films were evaluated by XRD measurements. AgGaTe2 layers were grown only at low source temperature (about 780 °C), and to have strong preference for the (103) orientation. By using the pole figure, it is possible to study the orientation of the film, and the substrate surface arrangement has resulted in this unique relationship.

本文言語English
ページ(範囲)1389-1392
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
10
11
DOI
出版ステータスPublished - 2013 11

ASJC Scopus subject areas

  • 凝縮系物理学

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