Deposition of hydrogenated amorphous silicon films using a microwave plasma chemical vapor deposition method with DC bias

Kiyotaka Kato*, Isamu Kato

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A DC bias is applied to a substrate placed in spatial afterglow plasma created by the double-tubed coaxial line-type microwave plasma chemical vapor deposition system. This DC bias method enables us to control only the ion bombardment energy without changing the ion flux density and the radical density. Hydrogenated amorphous silicon films were deposited, varying only the ion bombardment energy. With increasing ion bombardment energy, the dihydride bonds Si-H2 and the polyhydride bonds (Si-H2)n decrease, and the monohydride bonds Si-H and the film density increase.

本文言語English
ページ(範囲)1245-1247
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
30
6
出版ステータスPublished - 1991 6月

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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