Deposition of hydrogenated amorphous silicon films using a microwave plasma chemical vapor deposition method with DC bias

Kiyotaka Kato, Isamu Kato

研究成果: Article

3 引用 (Scopus)

抜粋

A DC bias is applied to a substrate placed in spatial afterglow plasma created by the double-tubed coaxial line-type microwave plasma chemical vapor deposition system. This DC bias method enables us to control only the ion bombardment energy without changing the ion flux density and the radical density. Hydrogenated amorphous silicon films were deposited, varying only the ion bombardment energy. With increasing ion bombardment energy, the dihydride bonds Si-H2 and the polyhydride bonds (Si-H2)n decrease, and the monohydride bonds Si-H and the film density increase.

元の言語English
ページ(範囲)1245-1247
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
30
発行部数6
出版物ステータスPublished - 1991 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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