Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers

Koichi Hasebe, Junichi Nishinaka, Takuro Fujii, Koji Takeda, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

研究成果: Conference contribution

抄録

We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.

元の言語English
ホスト出版物のタイトル2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509019649
DOI
出版物ステータスPublished - 2016 8 1
外部発表Yes
イベント2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
継続期間: 2016 6 262016 6 30

出版物シリーズ

名前2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
Japan
Toyama
期間16/6/2616/6/30

Fingerprint

Injection lasers
Fabrication
Thermal diffusion
Lasers
Ion implantation
Semiconductor quantum wells
Doping (additives)
Modulation
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Hasebe, K., Nishinaka, J., Fujii, T., Takeda, K., Yamamoto, T., Kakitsuka, T., & Matsuo, S. (2016). Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. : 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528753] (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528753

Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. / Hasebe, Koichi; Nishinaka, Junichi; Fujii, Takuro; Takeda, Koji; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528753 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

研究成果: Conference contribution

Hasebe, K, Nishinaka, J, Fujii, T, Takeda, K, Yamamoto, T, Kakitsuka, T & Matsuo, S 2016, Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. : 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528753, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528753
Hasebe K, Nishinaka J, Fujii T, Takeda K, Yamamoto T, Kakitsuka T その他. Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. : 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528753. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). https://doi.org/10.1109/ICIPRM.2016.7528753
Hasebe, Koichi ; Nishinaka, Junichi ; Fujii, Takuro ; Takeda, Koji ; Yamamoto, Tsuyoshi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Design and fabrication of directly-modulated 1.3-μm lateral-current-injection lasers. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).
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abstract = "We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47{\%} for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.",
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AU - Hasebe, Koichi

AU - Nishinaka, Junichi

AU - Fujii, Takuro

AU - Takeda, Koji

AU - Yamamoto, Tsuyoshi

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2016/8/1

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N2 - We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.

AB - We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-μm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To increase the optical confinement factor in the active region, we used an InGaAlAs-based 20-quantum-well structure. The device exhibited a threshold current of 16 mA and differential efficiency of 47% for a 400-μm long and 0.5-μm wide cavity. We also measured the relative intensity noise (RIN) spectrum to obtain parameters for the direct modulation. The LCI FP laser provided both high output power and high relaxation oscillation frequency.

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KW - lateral current injection

KW - semiconductor laser

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