Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection

K. Sakaue, M. Washio, A. Endo

研究成果: Conference contribution

抜粋

We will present a design of high brightness light source for EUV lithography mask inspection. The required system parameters are minimum brightness of 2500W/mm2/Sr at 13.5nm/2% bandwidth. Our design consists of superconducting DC RF-gun as a radiator and 10.74nm CO2 laser stacked in an optical cavity as a laser undulator. Recent achievements of each component technologies, which is 1.3GHz SC-RF-gun, 10kW average power short pulse CO2 laser, and laser storage optical super-cavity, indicate the feasibility of producing required brightness based on laser Compton undulator. Design parameters of high brightness EUV source, the technological gap of the present component technologies and required further developments will be resented at the conference.

元の言語English
ホスト出版物のタイトルIPAC 2010 - 1st International Particle Accelerator Conference
ページ148-150
ページ数3
出版物ステータスPublished - 2010 12 1
イベント1st International Particle Accelerator Conference, IPAC 2010 - Kyoto, Japan
継続期間: 2010 5 232010 5 28

出版物シリーズ

名前IPAC 2010 - 1st International Particle Accelerator Conference

Conference

Conference1st International Particle Accelerator Conference, IPAC 2010
Japan
Kyoto
期間10/5/2310/5/28

    フィンガープリント

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

これを引用

Sakaue, K., Washio, M., & Endo, A. (2010). Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection. : IPAC 2010 - 1st International Particle Accelerator Conference (pp. 148-150). (IPAC 2010 - 1st International Particle Accelerator Conference).