Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection

Kazuyuki Sakaue, Masakazu Washio, A. Endo

研究成果: Conference contribution

抄録

We will present a design of high brightness light source for EUV lithography mask inspection. The required system parameters are minimum brightness of 2500W/mm2/Sr at 13.5nm/2% bandwidth. Our design consists of superconducting DC RF-gun as a radiator and 10.74nm CO2 laser stacked in an optical cavity as a laser undulator. Recent achievements of each component technologies, which is 1.3GHz SC-RF-gun, 10kW average power short pulse CO2 laser, and laser storage optical super-cavity, indicate the feasibility of producing required brightness based on laser Compton undulator. Design parameters of high brightness EUV source, the technological gap of the present component technologies and required further developments will be resented at the conference.

元の言語English
ホスト出版物のタイトルIPAC 2010 - 1st International Particle Accelerator Conference
ページ148-150
ページ数3
出版物ステータスPublished - 2010
イベント1st International Particle Accelerator Conference, IPAC 2010 - Kyoto
継続期間: 2010 5 232010 5 28

Other

Other1st International Particle Accelerator Conference, IPAC 2010
Kyoto
期間10/5/2310/5/28

Fingerprint

inspection
light sources
brightness
masks
lithography
lasers
cavities
radiators
direct current
bandwidth
pulses

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

これを引用

Sakaue, K., Washio, M., & Endo, A. (2010). Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection. : IPAC 2010 - 1st International Particle Accelerator Conference (pp. 148-150)

Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection. / Sakaue, Kazuyuki; Washio, Masakazu; Endo, A.

IPAC 2010 - 1st International Particle Accelerator Conference. 2010. p. 148-150.

研究成果: Conference contribution

Sakaue, K, Washio, M & Endo, A 2010, Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection. : IPAC 2010 - 1st International Particle Accelerator Conference. pp. 148-150, 1st International Particle Accelerator Conference, IPAC 2010, Kyoto, 10/5/23.
Sakaue K, Washio M, Endo A. Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection. : IPAC 2010 - 1st International Particle Accelerator Conference. 2010. p. 148-150
Sakaue, Kazuyuki ; Washio, Masakazu ; Endo, A. / Design of high brightness light source based on laser-compton undulator for EUV lithography mask inspection. IPAC 2010 - 1st International Particle Accelerator Conference. 2010. pp. 148-150
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