Detection and characterization of trace element contamination on silicon wafers

Andy Singh, Katharina Baur, Sean Brennan, Takayuki Homma, Nobuhiro Kubo, Piero Pianetta

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection x-ray fluorescence (SR-TXRF) where sensitivities 100 times better than conventional techniques have been achieved. This has resulted in minimum detection limits for transition metals of 8x107 atoms/cm2. SR-TXRF studies of the amount of metal contamination deposited on a silicon surface as a function of pH and oxygen content of the etching solutions have provided insights into the mechanisms of metal deposition from solutions containing trace amounts of metals ranging from parts per trillion to parts per billion. Furthermore, by using XANES to understand the chemical state of the metal atoms after deposition, it has been possible to develop chemical models for the deposition processes. Examples will be provided for copper deposition from ultra pure water and acidic solutions.

元の言語English
ホスト出版物のタイトルX-Ray and Inner-Shell Processes
編集者Antonio Bianconi, Augusto Marcelli, Naurang L. Saini
出版者American Institute of Physics Inc.
ページ472-480
ページ数9
ISBN(電子版)073540111X
DOI
出版物ステータスPublished - 2003 1 24
イベント19th International Conference on X-Ray and Inner-Shell Processes - Rome, Italy
継続期間: 2002 6 242002 6 28

出版物シリーズ

名前AIP Conference Proceedings
652
ISSN(印刷物)0094-243X
ISSN(電子版)1551-7616

Conference

Conference19th International Conference on X-Ray and Inner-Shell Processes
Italy
Rome
期間02/6/2402/6/28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント Detection and characterization of trace element contamination on silicon wafers' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Singh, A., Baur, K., Brennan, S., Homma, T., Kubo, N., & Pianetta, P. (2003). Detection and characterization of trace element contamination on silicon wafers. : A. Bianconi, A. Marcelli, & N. L. Saini (版), X-Ray and Inner-Shell Processes (pp. 472-480). (AIP Conference Proceedings; 巻数 652). American Institute of Physics Inc.. https://doi.org/10.1063/1.1536408