Determination of local atomic displacements in CeO1-xFxBiS2 system

E. Paris*, B. Joseph, A. Iadecola, T. Sugimoto, L. Olivi, S. Demura, Y. Mizuguchi, Y. Takano, T. Mizokawa, N. L. Saini

*この研究の対応する著者

研究成果: Article査読

45 被引用数 (Scopus)

抄録

We have used Bi and Ce L 3-edges extended x-ray absorption fine structure measurements to study local structure of CeO1-xFxBiS2 system as a function of F-substitution. The local structure of both BiS2 active layer and CeO1-xFx spacer layer changes systematically. The in-plane Bi-S1 distance decreases (ΔRmax∼0.08) and the out-of-plane Bi-S2 distance increases (ΔRmax∼0.12) with increasing F-content. On the other hand, the Ce-O/F distance increases (ΔRmax∼0.2) with a concomitant decrease of the Ce-S2 distance (ΔRmax∼0.15). Interestingly, the Bi-S1 distance is characterized by a large disorder that increases with F-content. The results provide useful information on the local atomic displacements in CeO1-xFxBiS2, that should be important for the understanding of the coexistence of superconductivity and low temperature ferromagnetism in this system.

本文言語English
論文番号435701
ジャーナルJournal of Physics Condensed Matter
26
43
DOI
出版ステータスPublished - 2014 10 29
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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