Development and applications of a Si nano-photodiode with a surface plasmon antenna

Keishi Ohashi*, Junichi Fujikata, Tsutomu Ishi, Daisuke Okamoto, Kikuo Makita, Kenichi Nishi

*この研究の対応する著者

研究成果: Conference contribution

抄録

We developed a nano-photodiode that confines and absorbs the sub-wavelength-size optical near field in small-scale silicon. A surface plasmon resonance antenna is used to enhance the near field in silicon. The response time of the nanophotodiodes is shorter than that of conventional photodiodes because the separation between anode and cathode and the size of the electrodes can be as small as one thousandth of that for conventional photodiodes. The full-width at half-maximum of the impulse response of the silicon nano-photodiode was as fast as ∼20 ps even when the bias voltage was less than 1 V. This nano-photodiode technology can be applied to other semiconductor materials such as germanium and ternary compound semiconductors.

本文言語English
ホスト出版物のタイトルOptoelectronic Materials and Devices
DOI
出版ステータスPublished - 2006 12 27
外部発表はい
イベントOptoelectronic Materials and Devices - Gwangju, Korea, Republic of
継続期間: 2006 9 52006 9 7

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
6352 II
ISSN(印刷版)0277-786X

Conference

ConferenceOptoelectronic Materials and Devices
国/地域Korea, Republic of
CityGwangju
Period06/9/506/9/7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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