Development and evaluation of SiC inverter using Ni micro plating bonding power module

Akihiro Kawagoe, Tomoya Itose, Akihiro Imakiire, Masahiro Kozako, Masayuki Hikita, Kohei Tatsumi, Tomonori Iizuka, Isamu Morisako, Nobuaki Sato, Koji Shimizu, Kazutoshi Ueda, Kazuhiko Sugiura, Kazuhiro Tsuruta, Keiji Toda

研究成果: Conference contribution

1 引用 (Scopus)

抄録

This paper reports on evaluation of inverter system using silicon carbide (SiC) power module with a novel packaging technology of Ni micro plating bonding. The power module is developed to make the structure maximize the performance of SiC attracting attention in recent years. As a result, it was found that the developed inverter reduces the inverter loss and improves the efficiency of the entire inverter system as compared with in-vehicle product using Si-IGBT and the inverter consisting of the conventional package structure using SiC MOSFET. Moreover, it was confirmed that switching was possible even when the chip temperature exceeded 200°C, suggesting that the developed inverter can be driven under the high temperature environment.

元の言語English
ホスト出版物のタイトル2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ36-39
ページ数4
ISBN(電子版)9781538676097
DOI
出版物ステータスPublished - 2019 4 1
イベント3rd IEEE International Workshop on Integrated Power Packaging, IWIPP 2019 - Toulouse, France
継続期間: 2019 4 242019 4 26

出版物シリーズ

名前2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019

Conference

Conference3rd IEEE International Workshop on Integrated Power Packaging, IWIPP 2019
France
Toulouse
期間19/4/2419/4/26

Fingerprint

Plating
Silicon carbide
Insulated gate bipolar transistors (IGBT)
Packaging
Temperature
silicon carbide

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Kawagoe, A., Itose, T., Imakiire, A., Kozako, M., Hikita, M., Tatsumi, K., ... Toda, K. (2019). Development and evaluation of SiC inverter using Ni micro plating bonding power module. : 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019 (pp. 36-39). [8799079] (2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWIPP.2019.8799079

Development and evaluation of SiC inverter using Ni micro plating bonding power module. / Kawagoe, Akihiro; Itose, Tomoya; Imakiire, Akihiro; Kozako, Masahiro; Hikita, Masayuki; Tatsumi, Kohei; Iizuka, Tomonori; Morisako, Isamu; Sato, Nobuaki; Shimizu, Koji; Ueda, Kazutoshi; Sugiura, Kazuhiko; Tsuruta, Kazuhiro; Toda, Keiji.

2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 36-39 8799079 (2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019).

研究成果: Conference contribution

Kawagoe, A, Itose, T, Imakiire, A, Kozako, M, Hikita, M, Tatsumi, K, Iizuka, T, Morisako, I, Sato, N, Shimizu, K, Ueda, K, Sugiura, K, Tsuruta, K & Toda, K 2019, Development and evaluation of SiC inverter using Ni micro plating bonding power module. : 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019., 8799079, 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019, Institute of Electrical and Electronics Engineers Inc., pp. 36-39, 3rd IEEE International Workshop on Integrated Power Packaging, IWIPP 2019, Toulouse, France, 19/4/24. https://doi.org/10.1109/IWIPP.2019.8799079
Kawagoe A, Itose T, Imakiire A, Kozako M, Hikita M, Tatsumi K その他. Development and evaluation of SiC inverter using Ni micro plating bonding power module. : 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 36-39. 8799079. (2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019). https://doi.org/10.1109/IWIPP.2019.8799079
Kawagoe, Akihiro ; Itose, Tomoya ; Imakiire, Akihiro ; Kozako, Masahiro ; Hikita, Masayuki ; Tatsumi, Kohei ; Iizuka, Tomonori ; Morisako, Isamu ; Sato, Nobuaki ; Shimizu, Koji ; Ueda, Kazutoshi ; Sugiura, Kazuhiko ; Tsuruta, Kazuhiro ; Toda, Keiji. / Development and evaluation of SiC inverter using Ni micro plating bonding power module. 2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 36-39 (2019 IEEE International Workshop on Integrated Power Packaging, IWIPP 2019).
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abstract = "This paper reports on evaluation of inverter system using silicon carbide (SiC) power module with a novel packaging technology of Ni micro plating bonding. The power module is developed to make the structure maximize the performance of SiC attracting attention in recent years. As a result, it was found that the developed inverter reduces the inverter loss and improves the efficiency of the entire inverter system as compared with in-vehicle product using Si-IGBT and the inverter consisting of the conventional package structure using SiC MOSFET. Moreover, it was confirmed that switching was possible even when the chip temperature exceeded 200°C, suggesting that the developed inverter can be driven under the high temperature environment.",
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