抄録
The gap-type atomic switch is a novel neuromorphic device that possesses functions such as analog changes in resistance and short-term/long-term memory-based learning. However, it is difficult to integrate conventional gap-type atomic switches that use a vacuum gap and Ag2+δS, which has restricted their practical use. In this study, we developed a new, easy to fabricate gap-type atomic switch that incorporates a molecular layer as a gap and Ta2O5 as an ionic transfer material. This molecular gap-type atomic switch operates in a manner that is similar to conventional vacuum gap-type atomic switches. We also demonstrate stochastic operations using the aforementioned molecular gap-type atomic switches. These results indicate a higher potential for the practical use of gap-type atomic switches.
本文言語 | English |
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論文番号 | 152114 |
ジャーナル | Journal of Applied Physics |
巻 | 124 |
号 | 15 |
DOI | |
出版ステータス | Published - 2018 10月 21 |
ASJC Scopus subject areas
- 物理学および天文学(全般)