Development of a Si/CdTe semiconductor Compton telescope

Takaaki Tanaka*, Takefumi Mitani, Shin Watanabe, Kazuhiro Nakazawa, Kousuke Oonuki, Goro Sato, Tadayuki Takahashi, Ken'ichi Tamura, Hiroyasu Tajima, Hidehito Nakamura, Masaharu Nomachi, Tatsuya Nakamoto, Yasushi Fukazawa

*この研究の対応する著者

研究成果: Article査読

26 被引用数 (Scopus)

抄録

We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9° and 5.7° at 122 keV and 356 keV, respectively.

本文言語English
論文番号28
ページ(範囲)229-240
ページ数12
ジャーナルUnknown Journal
5501
DOI
出版ステータスPublished - 2004

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 凝縮系物理学

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