TY - JOUR
T1 - Development of an epitaxial growth technique using iii-v on a si platform for heterogeneous integration of membrane photonic devices on si
AU - Fujii, Takuro
AU - Hiraki, Tatsurou
AU - Aihara, Takuma
AU - Nishi, Hidetaka
AU - Takeda, Koji
AU - Sato, Tomonari
AU - Kakitsuka, Takaaki
AU - Tsuchizawa, Tai
AU - Matsuo, Shinji
N1 - Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/2/2
Y1 - 2021/2/2
N2 - The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (In-GaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.
AB - The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (In-GaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.
KW - Direct bonding
KW - Epitaxial growth
KW - Photonic integrated circuits (PICs)
KW - Semiconductor lasers
KW - Silicon photonics
UR - http://www.scopus.com/inward/record.url?scp=85101851499&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85101851499&partnerID=8YFLogxK
U2 - 10.3390/app11041801
DO - 10.3390/app11041801
M3 - Article
AN - SCOPUS:85101851499
VL - 11
SP - 1
EP - 22
JO - Applied Sciences (Switzerland)
JF - Applied Sciences (Switzerland)
SN - 2076-3417
IS - 4
M1 - 1801
ER -