Development of an SOI analog front-end ASIC for X-ray charge coupled devices

Tetsuichi Kishishita*, Goro Sato, Hirokazu Ikeda, Motohide Kokubun, Tadayuki Takahashi, Toshihiro Idehara, Hiroshi Tsunemi, Yasuo Arai

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The FD-SOI technology is a fascinating LSI fabrication process as a possible radiation-tolerant device. In order to confirm benefits of the FD-SOI and expand application ranges in front-end electronics, we experimentally designed an analog front-end ASIC for X-ray CCD readout with the FD-SOI process. The circuit design was submitted to OKI Semiconductor Co., Ltd. via the multi-chip project as a part of the SOI pixel-detector R&D program in KEK. The ASIC contains seven readout channels using the correlated double sampling technique, and includes key circuit elements for a low-noise LSI. This paper describes the circuit design and the performance of the ASIC together with the radiation tolerance.

ASJC Scopus subject areas

  • 器械工学
  • 核物理学および高エネルギー物理学

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