Development of compact EUV source based on laser compton scattering

S. Kashiwagi, R. Kato, J. Yang, G. Isoyama, K. Sakaue, A. Masuda, T. Nomoto, T. Gowa, M. Washio, R. Kuroda, J. Urakawa

研究成果: Conference contribution

抄録

High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start developing a compact EUV source in the spectral range of 13-14 nm, which is based on laser Compton scattering between a 7 MeV electron beam and a high intensity CO2 laser pulse. Before the main laser Compton scattering for EUV radiation, the electron beam is prebunched by a high power seeding laser pulse with the Compton wavelength at a harmonic of the seeding laser [1]. In this paper, we describe the preliminary consideration for the EUV source development and a plan of experiment generating micro-bunched electron beam.

元の言語English
ホスト出版物のタイトルProceedings of the IEEE Particle Accelerator Conference, PAC07
ページ2799-2801
ページ数3
DOI
出版物ステータスPublished - 2007
イベントIEEE Particle Accelerator Conference, PAC07 - Albuquerque, NM, United States
継続期間: 2007 6 252007 6 29

出版物シリーズ

名前Proceedings of the IEEE Particle Accelerator Conference

Conference

ConferenceIEEE Particle Accelerator Conference, PAC07
United States
Albuquerque, NM
期間07/6/2507/6/29

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント 「Development of compact EUV source based on laser compton scattering」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル